Carbon nano tube is one of the most emerging technology which is to replace CMOS .  Using Carbon nano tube it is possible to make which is much smaller than present device. The power consumption is picco watt, switching energy is nano watt and the most importent is it is cost effective.

               Using Carbon nanotube we can design a FET transistor which will be an alternative of MOSFET. CN FET contains a Carbon tube which forms a channel between drain and source. This tube allow  the transportation of carrier between the electrode. The electric potential applied on the gate terminal cintrols the flow of carrier. One of the most attractive feature of  Carbon nano device is conversion of N to P or P to N device, it not possible only from  dopping but also from the electric field. On the application of suitable electric field the same device will act as N / P polarity device.